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    BAS16LD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 6 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode 8. Test information (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ =0.05 Oscilloscope: rise time tr =0.35ns Fig 6. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤0.005 Fig 7. Forward recovery voltage test circuit and waveforms trr (1) + I F t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 kΩ 450 Ω D.U.T. mga882 VFR t output signal V |